RTP Anneal과 추가 이온주입에 의한 저-저항 텅스텐 bit-line 구현

Low-Resistance W Bit-line Implementation with RTP Anneal & Additional Ion Implantation.

As the device geometry continuously shrink down less than sub-quarter micrometer, DRAM makers are going to replace conventional tungsten-polycide with tungsten bit-line structure in order to reduce the chip size and use it as a local interconnection. In this paper we showed low resistance and leakage tungsten bit-line process with various RTP(Rapid Thermal Process) temperature. As a result we obtained that major parameters impact on tungsten bit-line process are RTP Anneal temperature and BF2 ion implantation dopant. These tungsten bit-line process are promising to fabricate high density chip technology.