Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Tungsten Silicide ($WSi_2$) for Alternate Gate Metal in Metal-Oxide-Semiconductor (MOS) Devices

금속-산화막-반도체 소자에서 대체 게이트 금속인 텅스텐 실리사이드의 특성 분석

  • 노관종 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 윤선필 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 양성우 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 노용한 (성균관대학교 전기전자 및 컴퓨터공학부)
  • Published : 2000.06.01
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Abstract

Tungsten silicide(WSi$_2$) is proposed for the alternate gate electrode of ULSI MOS devices. Good structural property and low resistivity of WSi$_2$ deposited by a low pressure chemical vapor deposition(LPCVD) method directly on SiO$_2$ is obtained after annealing. Especially, WSi$_2$-SiO2 interface remains flat after annealing tungsten silicide at high temperature. Electrical characteristics of annealed WSi$_2$-SiO$_2$-Si(MOS) capacitors were improved in view of charge trapping.

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