대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

p-Si 기판 위에 형성된 $S iO_2/S iN/S iO_2$박막의 특성에 관한 연구

fabrication and characterization of $S iO_2/S iN/S iO_2$ films on p-Si

  • 성규석 (동국대학교 반도체과학과) ;
  • 이세준 (동국대학교 반도체과학과) ;
  • 김두수 (동국대학교 반도체과학과) ;
  • 강윤묵 (동국대학교 반도체과학과) ;
  • 차정호 (동국대학교 반도체과학과) ;
  • 김현정 (동국대학교 반도체과학과) ;
  • 정웅 (동국대학교 반도체과학과) ;
  • 김득영 (동국대학교 반도체과학과) ;
  • 홍치유 (동국대학교 물리학과) ;
  • 조훈영 (동국대학교 물리학과) ;
  • 강태원 (동국대학교 물리학과)
  • Seong, K.S. (Department of Semiconductor Science Dongguk University) ;
  • Lee, S.J. (Department of Semiconductor Science Dongguk University) ;
  • Kim, D.S. (Department of Semiconductor Science Dongguk University) ;
  • Kang, Y.M. (Department of Semiconductor Science Dongguk University) ;
  • Cha, J.H. (Department of Semiconductor Science Dongguk University) ;
  • Kim, H.J. (Department of Semiconductor Science Dongguk University) ;
  • Jung, W. (Department of Semiconductor Science Dongguk University) ;
  • Kim, D.Y. (Department of Semiconductor Science Dongguk University) ;
  • Hong, C.Y. (Department of Physics Dongguk University) ;
  • Cho, H.Y. (Department of Physics Dongguk University) ;
  • Kang, T.W. (Department of Physics Dongguk University)
  • 발행 : 2000.06.01
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초록

Oxide-nitride-oxide(ONO) structures were formed by sequential radio frequency reactive magnetron sputtering method. The chemical composition and structure of these films were studied by using of secondary ion mass spectroscopy(SIMS) and Auger electron spectroscopy(AES) SIMS and AES experiments show the existence of nitridation at the SiO$_2$/Si substrate. The electrical characteristics of ONO films were evaluated by I-V and high frequency C-V measurements When the ONO films were annealed at 90$0^{\circ}C$ for 30 sec in $N_2$ ambient, the breakdown voltage increased and flat-band voltage decreased under high electric field.

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