한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

Bragg 반사층을 이용한 IMT-2000 대역통과필터용 체적 탄성파 공진기

Film Bulk Acoustic Resonator(FBAR) using Bragg Reflector for IMT-2000 Bandpass Filter

  • 김상희 (광운대학교 전파공학과) ;
  • 김종헌 (광운대학교 전파공학과) ;
  • 박희대 (Advanced New Technology 기술개발연구소) ;
  • 이시형 (연세대학교 세라믹공학과) ;
  • 이전국 (한국과학기술연구원 박막기술연구센터)
  • 발행 : 2000.07.01
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초록

Film bulk acoustic resonator (FBAR) using AIN reactively sputtered at room temperature was fabricated. The FBAR is composed of a piezoelectric aluminium nitride thin film, top electrode of Al and bottom electrode of Au connected by a short (200${\mu}{\textrm}{m}$) transmission line on both sides and reflector layers of SiO$_2$- W Pair. The active areas of Al and Au were patterned using 150${\mu}{\textrm}{m}$ diameter shadow mask. The series resonance frequency (fs) and the parallel resonance frequency (fp) were measured at 1.976 GHz and 2.005 GHz, respectively. The minimum insertion loss and return loss were 6.1 dB and 37.19 dB, and the quality factor (Q) was 4261.

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