Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2000.07a
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- Pages.361-364
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- 2000
ATO Thin Films Prepared by Reactive lout Beam Sputtering
반응성 이온빔 스퍼터링법에 의해 제조된 ATO박막
Abstract
Antimony doped tin oxide (ATO) thin films were deposited at room temperature by reactive ion-beam sputter deposition (IBSD) technique in oxidizing atmosphere utilizing Sb and Sn metal targets. Effect of Sb doping concentration, film thickness and heat treatment on electrical and optical properties was investigated. The thickness of as-deposited films was controlled approximately to 1500
Keywords
- tin oxide;
- ATO;
- thin film;
- ion-beam sputter depositon (IBSO);
- transparent electrode;
- reactive sputtering