Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2000.07a
- /
- Pages.111-114
- /
- 2000
Characterization of AlN thin films grown by plasma assisted molecular beam epitaxy on Si substrates
실리콘 기판 위에 플라즈마 분자선 에피택시를 이용하여 성장된 질화알루미늄 박막의 특성분석
Abstract
Growth characteristics and microstructure of AlN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the microstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90