Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2000.07a
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- Pages.82-85
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- 2000
DC Characteristices of GaAs MESFET with Different Physical Structures
구조적 변화에 따른 GaAs MESFET 제작 및 DC 특성
Abstract
The less sensitive structure to the surface effect has been presented utiliting an undoped GaAs layer on the n-GaAs channel. The undoped layer has been found to be effective to supress the frequency dispersion phenomena caused by a surface trapping effect and to raise the MESFET's performance. The gate structure, with an undoped layer underneath the gate metal has been found to be effective to improve the breakdown voltage. GaAs MESFETS with different physical structures are fabricated and DC characteristics are measued. GaAs MESFET's are fabricated on epi-wafers which have an undoped GaAs layer in between n+ and n GaAs layers grown by MBE.