한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

RF magnetron sputtering을 이용한 ($Ba_{0.5}Sr_{0.5})TiO_3$ 박막의 RF power 의 존성

Dependence of RF power of ($Ba_{0.5}Sr_{0.5})TiO_3$ thin film using RF magnetron sputtering

  • 최형윤 (청주대학교 전자공학과) ;
  • 이태일 (청주대학교 전자공학과) ;
  • 정순원 (청주대학교 전자공학과) ;
  • 박인철 (청주대학교 전자공학과) ;
  • 최동한 (청주대학교 전자·정보통신·반도체 공학부) ;
  • 김흥배 (청주대학교 전자·정보통신·반도체 공학부)
  • 발행 : 2000.07.01
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초록

In this paper, $Ba_{0.5}$Sr$_{0.5}$TiO$_3$ thin films were prepared on Pt/Ti/SiO$_2$/Si substrate by RF magnetron sputtering method. We investigated effect of deposition conditions (especially RF input power) on structural properties of BST thin films. Deposit conditions of BST films were set working gas ratio, Ar:O$_2$= 70 : 30, working pressure 10mTorr, and RF input power 25W, 50W, 75W and 100W. Post-annealing using rapid thermal annealing(RTA) performed at 45$0^{\circ}C$, 55$0^{\circ}C$, $650^{\circ}C$, and 75$0^{\circ}C$ in oxigen ambient for 60 sec, respectively. The structural properties of BST films on Pt/Ti/SiO$_2$/Si substrate analysed by X-ray diffraction(XRD).).).

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