Charged Cluster Model as a New Paradigm of Crystal Growth

  • Nong-M. Hwang (Center for Microstructure Science of Materials, School Material Science & Engineering, Seoul National University & Korea Research Institute of Standards and Science) ;
  • In-D. Jeon (Center for Microstructure Science of Materials, School Material Science & Engineering, Seoul National University) ;
  • Kim, Doh-Y. (Center for Microstructure Science of Materials, School Material Science & Engineering, Seoul National University)
  • Published : 2000.06.01

Abstract

A new paradigm of crystal growth was suggested in a charged cluster model, where charged clusters of nanometer size are suspended in the gas phase in most thin film processes and are a major flux for thin film growth. The existence of these hypothetical clusters was experimentally confirmed in the diamond and silicon CVD processes as well as in gold and tungsten evaporation. These results imply new insights as to the low pressure diamond synthesis without hydrogen, epitaxial growth, selective deposition and fabrication of quantum dots, nanometer-sized powders and nanowires or nanotubes. Based on this concept, we produced such quantum dot structures of carbon, silicon, gold and tungsten. Charged clusters land preferably on conducting substrates over on insulating substrates, resulting in selective deposition. if the behavior of selective deposition is properly controlled, charged clusters can make highly anisotropic growth, leading to nanowires or nanotubes.

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