Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2000.07c
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- Pages.1803-1805
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- 2000
Optimum Ge Profile for Higher Cut Off Frequency of SiGe HBT
SiGe HBT 소자의 높은 차단 주파수 특성을 위한 Ge profile 연구
- Kim, Sung-Hoon (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
- Kim, Kyung-Hae (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
- Lee, Hoong-Joo (Division of Computer-Information-Telecommunication Science, Sangmyung University) ;
- Ryum, Byung-Ryul (ASB Inc.) ;
- Yi, Jun-Sin (Department of Electrical and Computer Engineering, Sungkyunkwan University)
- 김성훈 (성균관대학교 전기전자 및 컴퓨터공학부) ;
- 김경해 (성균관대학교 전기전자 및 컴퓨터공학부) ;
- 이홍주 (상명대학교 컴퓨터.정보.통신학부) ;
- 염병렬 ;
- 이준신 (성균관대학교 전기전자 및 컴퓨터공학부)
- Published : 2000.07.17
Abstract
This paper analyzes the effects of Ge profiles shape of SiGe heterojunction bipolar transistors (HBT's) for high frequency application. Device simulations using ATLAS/BLAZE for the SiGe HBT with trapezoidal or triangular Ge profile are carried out to optimize the device performance. An HBT with 15% triangular Ge profile shows higher cut-off frequency and DC current gain than that with 19% trapezoidal Ge profile. The cut-off frequency and BC gain are increased from 42GHz to 84GHz and from 200 to 600, respectively.
Keywords