대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 2000년도 하계학술대회 논문집 C
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- Pages.1772-1775
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- 2000
두 단계 열처리 방법으로 결정화된 새로운 구조의 다결정 실리콘 박막 트렌지스터의 제작
Fabrication of the Two-Step Crystallized Polycrystalline Silicon Thin Film Transistors with the Novel Device Structure
- Choi, Yong-Won (Myongji University) ;
- Wook, Hwang-Han (Myongji University) ;
- Kim, Yong-Sang (Myongji University) ;
- Kim, Han-Soo (Doowon Technical College)
- 발행 : 2000.07.17
초록
We have fabricated poly-Si TFTs by two-step crystallizaton. Poly-Si films have been prepared by furnace annealing(FA) and rapid thermal annealing(RTA) followed by subsequent the post-annealing, excimer laser annealing. The measured crystallinity of RTA and FA annealed poly-Si film is 77% and 68.5%, respectively. For two-step annealed poly-Si film, the crystallinity has been drastically to 87.7% and 86.3%. The RMS surface roughness from AFM results have been improved from 56.3
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