Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2000.07c
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- Pages.1483-1484
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- 2000
Effect of annealing of Pb(La,Ti)$O_3$ thin films by Pulsed laser deposition process
펄스 레이저 증착법으로 제작된 PLT박막의 열처리 효과 연구
- Hur, Chang-Hoi (Department of Electrical and Computer Engineering, Yonsei University) ;
- Shim, Kyung-Suk (Department of Electrical and Computer Engineering, Yonsei University) ;
- Lee, Sang-Yeol (Department of Electrical and Computer Engineering, Yonsei University)
- Published : 2000.07.17
Abstract
Dielectric thin films of PLT(Pb(La.Ti)O3) for the application of highly integrated memory devices have been deposited on Pt/Ti/SiO2/Si substrates in situ by pulsed laser deposition(PLD). We have systematically investigated the variation of grain sizes depending on the condition of post-annealing and the variation of deposition rate. Both in-situ annealing and ex-situ annealing have been compared depending on the annealing time. C-V measurement, ferroelectric properties, leakage current and SEM were performed to investigate the electrical properties and the microstructural properties of Pb(La,Ti)
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