Proceedings of the Korean Society of Machine Tool Engineers Conference (한국공작기계학회:학술대회논문집)
- 1999.05a
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- Pages.128-133
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- 1999
Study on Characteristics of Ground Surface in Silicon Wafer Grinding
실리콘 웨이퍼 연삭가공 특성 평가에 관한 연구
Abstract
In recent years, LSI devices have become more powerful and lower-priced, caused by a development of various wafer materials and an increase in the diameter of wafers. On the other hand, these have created some serious problems in manufacturing of wafers because materials used as semiconductor substrate are very brittle. In view of this fact, there are some trials to apply shear-mode(or ductile-mode) grinding for efficient manufacturing of semiconductor wafers instead of conventional lapping process. In fact grinding process that has not only more excellent degree of accuracy but also more adaptable to fully automated manufacturing than lapping, is already used in Si machining field. This paper described the elementary studies to establish the grinding technology of wafers. First, we investigated the variation of grinding force and the transition of grinding mode as various grinding conditions. Then, it was inspected that the change of grinding force affected the integrity such as the topography and the roughness of ground surfaces, and led to the chemical defects generation and distribution in damaged layer. The degree of defects was estimated by FT-IR(Fourier Transformed Infrared) Spectroscopy and Auger Electron Spectroscopy
Keywords
- silicon wafer;
- wafer grinding technology;
- grinding force;
- specific grinding energy;
- surface roughness;
- chemical defects penetration