Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 1999.06a
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- Pages.261-264
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- 1999
Reducing the Poly-Si TFT Nonuniformity by Transistor Slicing
다결정 실리콘 TFT의 불균일도 개선을 위한 트랜지스터 슬라이싱
Abstract
This paper presents a circuit-level method to deal with transistor nonuniformity In this method, which is called transistor slicing, a transistor is implemented as a parallel connection of multiple smaller transistors. The paper analyzes the method and demonstrates that transistor slicing can effectively reduce the nonuniformity in TFT mobility and threshold voltage. The method is particularly useful in Implementing analog functions using poly-silicon TFTs which show a significant level of nonuniformity.
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