Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of Semiconductor Layer and Breakdown Strength of MDPE films

MDPE 필름의 절연파괴강도와 반도전층효과

  • 유성수 (원광대학교 전기전자공학부) ;
  • 리종찬 (원광대학교 전기전자공학부) ;
  • 류부형 (동국대학교 안전공학과) ;
  • 박수길 (충북대학교 공업화학과) ;
  • 박대희 (원광대학교 전기전자공학부)
  • Published : 1999.05.01
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Abstract

In this study, we evaluates the dependence of thickness and temperature in the breakdown strength of MDPE and effect of semiconductor. As the result, breakdown strength trend to decrease according to the increase of thickness and temperature but there is no dependence of temperature in the 70${\mu}{\textrm}{m}$ MDPE film. We obtained the result that the breakdown strength was a little lower in the structure of Semil/MDPE than Semi/MDPE/Semi, but breakdown strength of MDPE was greater both of all. Therefore we are investigating the effect of semiconductor in the breakdown strength.

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