한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1999년도 추계학술대회 논문집
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- Pages.461-463
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- 1999
N-채널 박막 SOI MOSFET의 후면 바이어스에 따른 전기적 특성 분석
Analysis of the electrical characteristics with back-gate bias in n-channel thin film SOI MOSFET
초록
In this paper, we have systematically investigated the variation of electrical characteristics with back-gate bias of n-channel SOI MOSFET\\`s. When positive bias is applied back-gate surface is inverted and back channel current is increased. When negative bias is applied back-gate surface is accumulated but it does not affect to the electrical characteristics.