이온선 스퍼터 증착법에 의하여 제초된 CrOX의 전기적 특성에 관한 연구

Study on The Electrical Characteristics of Chromium Oxide Film Produced by ton Beam Sputter Deposition

  • 조남제 (부경대학교 대학원 기계공학과) ;
  • 장문식 (부산정보대학 기계산업계열) ;
  • 이규용 (부경대학교 기계공학과)
  • 발행 : 1999.11.01

초록

The influence of ion beam energy and reactive oxygen partial pressure on the electrical and crystallographic characteristics of transition metal oxide compound(Cr0x) film was studied in this paper. Chromium oxide films were prepared onto the coverglass using Ion Beam Sputter Deposition(1BSD) technique according to the processing conditions of the partial pressure of reactive oxygen gas and ion beam energy. Crystallinity and grain size of as-deposited films were analyzed using XRD analysis. Thickness and Resistivity of the films were measured by $\alpha$-step and 4-point probe measurement. As results, according to the XRD, XPS and resistivity measurement, the deposited films were the cermet type films which has a crystal structure including amorphous oxide(a-oxide) phase and metal Cr phase simultaneously. The increasernent of the ion b m energy during the deposition process happened to decreasernent of metal Cr grain size and the rapid change of resistivity above the critical $O_2$ partial pressure.

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