Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Microwave Dielectric Properties of $BiNbO_4$ as The Addition of $MoO_3$

$MoO_3$첨가에 따른 $BiNbO_4$의 마이크로파 유전특성

  • 박영순 (원광대학교 전자재료공학과) ;
  • 김덕규 (원광대학교 전자재료공학과) ;
  • 김규도 (원광대학교 전자재료공학과) ;
  • 박춘배 (원광대학교 전자재료공학과)
  • Published : 1999.11.01
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Abstract

In this paper, We described the effect of $MoO_3$ Addition and firing temperature on the microwave dielectric properties of $BiNb0_4$ ceramics. The specimens prepared by conventional mixed method was addicted by 0 - 0.03 wt% $MoO_3$ and fired at 860 - $950^{\circ}$ for 3hr. Density increased when $MoO_3$ is below O.Olwt% but decreased when over O.Olwt%. $BiNb0_4$ ceramics addicted with CuO 0.03wt % and $MoO_3$ 0.01 wt% showed microwave dielectric properties, Dielectric constant 37.5, Quality factor[Qx$f_0$]5500, Temperature coefficient of resonance frequency 15ppm/$^{\circ}$

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