한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

저유전율 물질인 Methylsilsesquioxane의 반응 이온 식각 공정

Reactive Ion Etching Process of Low-K Methylsisesquioxane Insulator Film

  • 정도현 (서강대학교 화학공학과) ;
  • 이용수 (서강대학교 화학공학과) ;
  • 이길헌 (서강대학교 화학공학과) ;
  • 김대엽 (서강대학교 화학공학과) ;
  • 김광훈 (서강대학교 화학공학과) ;
  • 이희우 (서강대학교 화학공학과) ;
  • 최종선 (홍익대학교 전기제어공학과)
  • 발행 : 1999.11.01
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초록

Continuing improvement of microprocessor performance involves in the devece size. This allow greater device speed, an increase in device packing density, and an increase in the number of functions that can reside on a single chip. However this has led to propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance(RC) coupling become significant due to increased wiring capacitance, especially interline capacitance between the metal lines on the same metal level. Becase of pattering MSSQ (Methylsilsequioxane), we use RIE(Reactive ton Etching) which is a good anisotrgpy. In this study, according as we control a flow rate of CF$_4$/O$_2$ gas, RF power, we analysis by using ${\alpha}$ -step, SEM and AFM,

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