Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on thinning of SDB SOI by electrochemical etch-stop

전기화학적 식각정지에 의한 SDB SOI의 박막화에 관한 연구

  • 김일명 (동서대학교 정보통신공학부) ;
  • 이승준 (동서대학교 정보통신공학부) ;
  • 강경두 (부경대학교 전자공학과) ;
  • 정수태 (부경대학교 전자공학과) ;
  • 주병권 (KIST 정보재료· 소자 연구센터) ;
  • 정귀상 (동서대학교 정보통신공학부)
  • Published : 1999.11.01
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Abstract

This paper describes on thinning SDB SOI substrates by SDB technology and electrochemical etch-stop. The surface of the fabricated SDB SOI substrates is more uniform than that grinding or polishing by mechanical method, and this process is possible to accurate SOI thickness control. During Electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential (OCP) point and the passivation potential (PP) poin and determinated to anodic substrates were analyzed by using AFM and SEM, respectivelv.

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