한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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- Pages.220-220
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- 1999
PLASMA SOURCE ION IMPLANTATION OF NITROGEN AND CARBON IONS INTO CO-CEMENTED WC
- Han, Seung-Hee (Advanced Analysis Center, Korea Institute of science and technology) ;
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Lee, Yeon-Hee
(Advanced Analysis Center, Korea Institute of science and technology) ;
- Lee, Jung-Hye (Advanced Analysis Center, Korea Institute of science and technology) ;
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Kim, Hai-Dong
(Department of Chemistry, Kyunghee University) ;
- Kim, Gon-Ho (Department of Physics, Hanyang University-Ansan) ;
- Kim, Yeong-Woo (Department of Physics, Hanyang University-Ansan) ;
- Cho, Jung-Hee (Department of Physics, Hanyang University-Ansan)
- 발행 : 1999.07.01
초록
In plasma source ion implantation, the target is immersed in the plasma and repetitively biased by negative high voltage pulses to implant the extracted ions from plasma into the surface of the target material. In this way, the problems of line-of-sight implantation in ion-beam ion implantation technique can be effectively solved. In addition, the high dose rate and simplicity of the equipment enable the ion implantation a commercially affordable process. In this work, plasma source ion implantation technique was used to improve the wear resistance of Co-cemented WC. which has been extensively used for high speed tools. Nitrogen and carbon ions were implanted using the pulse bias of -602kV, 25 sec and at various implantation conditions. The implanted samples were examined using scanning Auger electron spectroscopy and XPS to investigate the depth distributions of implanted ions and to reveal the chemical state change due to the ion implantation. The implanted ions were found to have penetrated to the depth of 3000
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