한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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- Pages.211-211
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- 1999
PEMOCVD of Ti(C,N) Thin Films on D2 Steel and Si(100) Substrates at Low Growth Temperatures
- Kim, Myung-Chan (Department of Chemistry, Sungkyunkwan University) ;
- Heo, Cheol-Ho (Department of Chemistry, Sungkyunkwan University) ;
- Boo, Jin-Hyo (Department of Chemistry, Sungkyunkwan University) ;
- Cho,Yong-Ki (Department of Metallurgical Engineering, Sungkyunkwan University) ;
- Han, Jeon-Geon (Department of Metallurgical Engineering, Sungkyunkwan University)
- 발행 : 1999.07.01
초록
Titanium nitride (TiN) thin films have useful properties including high hardness, good electrical conductivity, high melting point, and chemical inertness. The applications have included wear-resistant hard coatings on machine tools and bearings, decorative coating making use of the golden color, thermal control coatings for widows, and erosion resistant coatings for spacecraft plasma probes. For all these applications as feature sizes shrink and aspect ratios grow, the issue of good step coverage becomes increasingly important. It is therefore essential to manufacture conformal coatings of TiN. The growth of TiN thin films by chemical vapor deposition (CVD) is of great interest for achieving conformal deposition. The most widely used precursor for TiN is TiCl4 and NH3. However, chlorine impurity in the as-grown films and relatively high deposition temperature (>
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