Dense Plasma Sources for Conventional and $PI_3$ Implanters

  • S.A. Nikiforov (Efremov Research Institute of Electrophysical Apparatus(NIIEFA)) ;
  • Lee, H.S. (Korea Electrotechnology Research Institute(KERI)) ;
  • Kim, G.H. (Korea Electrotechnology Research Institute(KERI)) ;
  • G.H. Rim (Korea Electrotechnology Research Institute(KERI))
  • Published : 1999.11.01

Abstract

Both conventional and PI3 implanters require dense sources for high productivity rate, and small sheath expansion in PI3 besides. The problem of the creation of large volume uniform plasma in PI3 facilities replaces that of beam forming in accelerators. Some aspects of ion extraction in both cases and Langmuir probe plasma diagnostics with be discussed. Plasma parameters of large volume multicusp dc hot cathode and inductively coupled RF plasma sources obtained with Langmuir probe and ion mass analyzer with be presented. Design features and performances of high current Freeman and ECR ion sources will be described.

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