한국결정성장학회:학술대회논문집 (Proceedings of the Korea Association of Crystal Growth Conference)
- 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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- Pages.305-320
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- 1999
LPE법에 의한 고품질 $Er:LiNbO_3$ 단결정 박막의 성장
Growth of $Er:LiNbO_3$ single crystal thin film with high crystal quality by LPE method
- Shin, Tong-Il (School of Metallurgical and Materials Engineering, Sungkyunkwan University) ;
- Lee, Hyun (School of Metallurgical and Materials Engineering, Sungkyunkwan University) ;
- Shur, Joong-Won (School of Metallurgical and Materials Engineering, Sungkyunkwan University) ;
- Byungyou Hong (School of Electrical and Computer Engineering, Sungkyunkwan University) ;
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Yoon, Dae-Ho
(School of Metallurgical and Materials Engineering, Sungkyunkwan University)
- 발행 : 1999.06.01
초록
It was grown Er2O3 doped LiNbO3 single crystal thin films with high crystal quality by liquid phase epitaxial (LPE) method. Er2O3 was doped with a concentration of 1, 3, and 5 mol% respectively. After the growth of single crystal thin film, we examined the crystallinity and the lattice mismatch along the c-axis between the film and the substrate with the variation of Er2O3 dopant using X-ray double crystal technique. There were no lattice mismatches along the c-axis for the undoped and the films doped with 1 and 3 mol% of Er2O3. For 5 mol% of Er2O3 doped film, there was a lattice mismatch of 7.86x10-4nm along the c-axis.
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