한국결정성장학회:학술대회논문집 (Proceedings of the Korea Association of Crystal Growth Conference)

한국결정성장학회 (The Korea Association of Crystal Growth)
권호 표지

RF plasma-enhancd CVD 법에 의해 증착된 a-$Si_xC_{1x}:H$ 의 표면분석

Surface analysis of a-$Si_xC_{1x}:H$ deposited by RF plasma-enhanced CVD

  • Kim, Yong-Tak (School of Metallurgical and Materials Engineering, Sungkyunkwan University) ;
  • Yang, Woo-Seok (School of Metallurgical and Materials Engineering, Sungkyunkwan University) ;
  • Lee, Hyun (School of Metallurgical and Materials Engineering, Sungkyunkwan University) ;
  • Byungyou Hong (School of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Yoon, Dae-Ho (School of Metallurgical and Materials Engineering, Sungkyunkwan University)
  • 발행 : 1999.06.01
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초록

Thin films of hydrogenated amorphous silicon carbide compounds (a-SixC1x:H) of different compositions were deposited on Si substrate by RF plasma-enhanced chemical vapor deposition (PECVD). Experiments were carried out using silane(SiH4) and methane(CH4) as the gas precursors at 1 Torr and at low substrate temperature (25$0^{\circ}C$). The gas flow rate was changed with every other parameters (pressure, temperature, RF power) fixed. The substrate was Si(100) wafer and all of the films obtained were amorphous. The bonding structure of a-SixC1x:H films deposited was investigated by X-ray photoelectron spectroscopy (XPS) for the film compositions. In addition, the surface morphology of films was investigated by atomic force microscopy (AFM).

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