화학기상증착법으로 성장시킨 4H-SiC 동종박막의 성장 특성

Growth characteristics of 4H-SiC homoepitaxial layers grown by thermal CVD

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides (SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single-crystalline 4H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 4H-SiC homoepitaxial layers using a SiC-uncoated graphite susceptor that utilized Mo-plates was obtained. The CVD growth was performed in an RF-induction heated atmospheric pressure chamber and carried out using off-oriented substrates prepared by a modified Lely method. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, Raman spectroscopy, photoluminescence(PL), scanning electron microscopy (SEM) and other techniques were utilized. The best quality of 4H-SiC homoepitaxial layers was observed in conditions of growth temperature 1500$^{\circ}C$ and C/Si flow ratio 2.0 of C3H3 0.2sccm & SiH4 0.3sccm. The growth rate of epilayers was about 1.0$\mu\textrm{m}$/h in the above growth condition.