대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1999년도 하계학술대회 논문집 F
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- Pages.2568-2571
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- 1999
SBD를 갖는 MOSFET 동기정류기 손실특성
(Power Loss Characteristics in MOSFET Synchronous Retifier with Schottky Barrier Diode)
- Yoon, Suk-Ho (Kimcheon College) ;
- Kim, Yong (Dongguk University)
- 발행 : 1999.07.19
초록
Recently, new trend in telecommunication device is to apply low voltage, about 3.3V-1.5V. However, it is undesirable in view of high efficiency and power desity which is the most important requirement in the distributed power system. Rectification loss in the output stage in on-board converter for distributed power system are constrained to obtain high efficience at low output voltage power suppies. This paper is investigated conduction power loss in synchronouss rectifier with a parallel -connected Schottky Barrier Diode(SBD). Conduction losses are calculated for both MOSFET and SBD respectively. The SBD conduction power loss dissipates more than the MOSFET rectifier conduction power loss.
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