Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1999.07g
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- Pages.3313-3315
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- 1999
A study on pre-bonding mechanism of Si wafer at HF pre-treatment
HF 전처리시 실리콘 기판의 초기접합 메카니즘에 관한 연구
- Kang, Kyung-Doo (School of Information & Comunication Eng. Dongseo Univ.) ;
- Park, Chin-Sung (School of Information & Comunication Eng. Dongseo Univ.) ;
- Lee, Chae-Bong (School of Information & Comunication Eng. Dongseo Univ.) ;
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Ju, Byung-Kwon
(Electronic Materials & Devices Research Center KTST) ;
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Chung, Gwiy-Sang
(School of Information & Comunication Eng. Dongseo Univ.)
- 강경두 (동서대학교 정보통신공학부) ;
- 박진성 (동서대학교 정보통신공학부) ;
- 이채봉 (동서대학교 정보통신공학부) ;
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주병권
(KIST 정보소재.소자연구센터) ;
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정귀상
(동서대학교 정보통신공학부)
- Published : 1999.07.19
Abstract
Si direct bonding(SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, and applied pressure. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera respectively. A bond characteristic on the interface was analyzed by using IT- IR. Si-F bonds on Si surface after HF pre-treatment are replaced by Si-OH during a DI water rinse. Consequently, hydrophobic wafer was bonded by hydrogen bonding of Si
Keywords