Hydrogen Detecting Characteristics of the $WO_3$ Films Using the R/V Converting Circuit

저항-전압변환회로를 이용한 $WO_3$ 박막의 수소검지 특성 측정

Using the R/V converting circuit, hydrogen detecting characteristics of the $WO_3$ films were investigated. The R/V converting circuit is configured with the equivalently constant current driving method connecting an unknown resistor to be measured in the feedback loop of the or-amr rather than using a separated constant current circuit. The response time of the reference voltage for the R/V converting circuit was simulated by the circuit simulator "SABER", and it was found that the response time in the high resistance range become longer and the error amounts to 10%. From the simulation results. replacing the capacitor in the feedback loop of the second stage or-amp with a 0.001uF capacitor, when measuring in the high resistance range, the response characteristics are remarkably improved. The response time was shortened from about 10 seconds to below 1 second. Using this circuit, the effect of $WO_3$ films deposited by sputtering method on hydrogen was measured.