Proceedings of the KOSOMBE Conference (대한의용생체공학회:학술대회논문집)
- Volume 1998 Issue 11
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- Pages.209-210
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- 1998
Design Method of Noise Performance of CMOS Preamplifier for the Active Semiconductor Neural Probe
신경신호 기록용 능동형 반도체 미세전극을 위한 CMOS 전치증폭기의 잡음특성 설계방법
- Kim, Kyung-Hwan (School of Electrical Engineering, College of Engineering, Seoul National University) ;
- Kim, Sung-June (School of Electrical Engineering, College of Engineering, Seoul National University)
- Published : 1998.11.20
Abstract
Noise characteristics of preamplifier, the most essential part of on-chip signal processing circuitry for the active semiconductor neural probe, is the important factor determining the overall signal-to-noise-ratio (SNR). We present a systematic design method for the optimization of SNR, based on the spectral characteristics of the electrode, circuit noise and extracelluar action potential. Analytical expression is derived to calculate total output noise power. Output SNR of 2-stage CMOS preamplifier is tailored to meet the given specification while the layout area is minimized.
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