Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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$CH_4$ Gas Sensor Utilizing Pd-SiC Schottky Diode

Pd-SiC 쇼트키 다이오드를 이용한 $CH_4$ 가스센서

  • 김창교 (순천향대학교 전기공학과) ;
  • 이주헌 (순천향대학교 전기공학과) ;
  • 이영환 (순천향대학교 전기공학과)
  • Published : 1998.11.01
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Abstract

The mechanism of methane sensing by Pd-SiC diode was investigated over the temperature range of 400~$600^{\circ}C$. The effects or methane gas reaction on the parameters such as barrier height, initial rate of methane gas reaction are investigated. The methane gas reaction kinetics on the device are also discussed. The physical and chemical mechanism responsible for methane detection are proposed. Analysis of steady-state reaction kinetics using I-V method confirmed that methane gas reaction processes are responsible for the barrier height change in the diode.

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