Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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RTA Dependence of Pd/Ge/Pd/Ti/Au-InGaAs Ohmic Contact

Pd/Ge/Pd/Ti/Au-InGaAs 오믹접촉의 급속 열처리 의존성

  • 박성호 (한국전자통신연구원 회로소자연구소) ;
  • 김좌연 (호서대학교 재료공학과) ;
  • 김일호 (충주대학교 재료공학과)
  • Published : 1998.11.01
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Abstract

We have investigated a correlation of the electrical properties of the Pd/Ge/Pd/Ti/Au ohmic contact on n-InGaAs with its microstructures for the high temperature application of compound semiconductor devices. The samples were heat-treated by the rapid thermal annealing at various temperatures. In the contact system, moderately good specific contact resistance was obtained even before annealing because of the low metals-InGaAs barrier height, and better ohmic performances were observed by annealing up to 400˚C. But the ohmic performance was degraded after annealing at 450˚C due to the increment of Pd$_2$Ga$\sub$5/ phases.

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