FABRICATION OF 4H-SIC SCHOTTKY BARRIER DIODES WITH HIGH BREAKDOWN VOLTAGES

  • Kang, S.C. (Dept. of Inorganic Materials Eng.. Myongji Univ.) ;
  • Kum, B.H. (Dept. of Inorganic Materials Eng.. Myongji Univ.) ;
  • Shin, M.W. (Dept. of Inorganic Materials Eng.. Myongji Univ.) ;
  • Park, C.D. (Dept. of Electronic Eng., Myongji Univ.)
  • Published : 1998.08.01