THE EFFECTS OF PRE-TREATMENT ON $Ta_2O_5$ DIELECTRICS FOR A DRAM CAPACITOR

  • Nam, K.J. (Semiconductor R&D Center, Samsung Electronics. Co.) ;
  • Hyung, Y.W. (Semiconductor R&D Center, Samsung Electronics. Co.) ;
  • Park, Y.W. (Semiconductor R&D Center, Samsung Electronics. Co.) ;
  • Lee, S.I. (Semiconductor R&D Center, Samsung Electronics. Co.)
  • Published : 1998.08.01