Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)
- 1998.08a
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- Pages.41.1-41
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- 1998
THICKNESS DEPENDENCE OF CAPPING BARRIER TIO2 ON THE HYDROGEN RELATED DEGRADATION OF PT/PZT/PT FERROELECTRIC CAPACITOR IN DOUBLE LEVEL METALLIZATION FRAM
- Lee, S.Y. (Technology Development 3 Team, Semiconductor R & D Center, Samsung Electronics, Co.) ;
- Koo, K.N. (Technology Development 3 Team, Semiconductor R & D Center, Samsung Electronics, Co.) ;
- Jung, D.J. (Technology Development 3 Team, Semiconductor R & D Center, Samsung Electronics, Co.) ;
- Kim, B.H (Technology Development 3 Team, Semiconductor R & D Center, Samsung Electronics, Co.) ;
- Park, S.O. (Technology Development 3 Team, Semiconductor R & D Center, Samsung Electronics, Co.) ;
- Kim, K.N. (Technology Development 3 Team, Semiconductor R & D Center, Samsung Electronics, Co.)
- Published : 1998.08.01
Abstract
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