Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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EFFECT OF SURFACE ROUGHNESS ON THE ADHESION OF SILICON WAFERS PRIOR TO BONDING

  • Lee, D. H. (Department of Materials, Oxford University) ;
  • B. Derby (Department of Materials, Oxford University)
  • Published : 1998.06.01
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Abstract

To understand the effect of surface roughness on silicon wafer bonding, a continuum mechanical model is presented. This model is based on Obreimoff's experiment and the contact theory of rough surfaces. The surface energy of silicon was calculated to be much reduced than the theoretical value. Problems are discussed concerning surface film effects and the assumption of constant asperity radius and statistical distribution function.

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