한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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레이저 어블레이션법으로 제작된 PLZT 박막의 전기적특성

Electrical Properties of PLZT Thin Films Prepared By Pulsed Laser Ablation

  • 이도형 (연세대학교 전기공학과) ;
  • 장낙원 (연세대학교 전기공학과) ;
  • 마석범 (연세대학교 전기공학과) ;
  • 최형욱 (경원대학교 전기전자공학부) ;
  • 박창엽 (연세대학교 전기공학과)
  • 발행 : 1998.06.01
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초록

PLZT thin films were fabricated with different Zr/Ti ratios by pulsed laser deposition. PLZT films deposited on Pt/Ti/SiO$_2$/Si substrate. This PLZT thin films of 5000${\AA}$. thickness were crystallized at 600$^{\circ}C$, 200 mTorr O$_2$ press. 2/55/45 PLZT thin film showed a maximum dielectric constant value of $\varepsilon$$\_$r/=1500, and dielectric loss was 0.O$_3$. At 2/70/30 PLZT thin film, Coercive field and remnant polarization was respectively 19[kV/cm], 8[${\mu}$C/$\textrm{cm}^2$].

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