한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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- Pages.75-78
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- 1998
Scaled SONOSFET NOR형 Flash EEPROM
Scaled SONOSFET NOR Type Flash EEPROM
초록
The SONOSFET Shows low operation voltage, high cell density, anti good endurance due to modified Fowler-Nordheim tunneling as memory charge injection method. In this paper, therefore, the NOR-type Flash EEPROM composed of SONOSFET, which has fast lead operation speed and Random Access characteristics, is proposed. An 8