PE-MOCVD로 증착된 Hf(C,N) 박막의 Cu에 대한 확산 방지 특성

  • 노우철 (성균과대학교 물리학과) ;
  • 조용기 (성균관대학교 진공공학과) ;
  • 김영석 (성균과대학교 물리학과) ;
  • 정동근 (성균과대학교 물리학과)
  • 발행 : 1998.02.01

초록

Diffusion barrier characteristics of hf(C,N) thin films for Cu metalliztion was investgated. Hf(C,N) thin films were depposited on Si(100) suvstrates by ppulsed D. C pplasma enhanced metal-organic chemical vappor depposition (ppE-MOCVD) using Tetrakis diethyl amido hafnium (Hf[NC2H5)2]4 : TDEAHf) and N2 as pprecursors. X-ray diffraction analyses sheet resistance measurment and Rutherford backscattering sppectroscoppy analyses revealed that HF(C,N) films pprevent diffusion of Cu fairly well upp to $600^{\circ}C$. At $700^{\circ}C$ however Hf(C,N) films allowed a significant diffusion of Cu into the Si substrate.

키워드