Selective Chemical Vapor Deposition of $\beta$-SiC on Si Substrate Using Hexamethyldisilane/HCl/$H_2$ Gas System

  • Yang, Won-Jae (Department of Ceramic Engineering, Hanyang University) ;
  • Kim, Seong-Jin (Samsung Advanced Institute of Technology) ;
  • Chung, Yong-Sun (Ceramic Processing Research Center, Hanyang University) ;
  • Auh, Keun-Ho (Ceramic Processing Research Center, Hanyang University)
  • Published : 1998.09.01

Abstract

Selectivity of SiC deposition on a Si substrate partially covered with a masking material was investigated by introducing HCl gas into hexamethyldisilane/H2 gas system during the deposition. the schedule of the precursor and HCl gas flows was modified so that the selectivity of SiC deposition between a Si substrate and a mask material should be improved. It was confirmed that the selectivity of SiC deposition was improved by introducing HCl gas. Also, the pulse gas flow technique was effective to enhance the selectivity.

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