Proceedings of the Korea Association of Crystal Growth Conference (한국결정성장학회:학술대회논문집)
- 1998.09a
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- Pages.47-51
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- 1998
Deposition of GaN by Chloride VPE and its Thermodynamic Analysis
- Park, Chinho (Yeungnam University, School of Chemical Engineering & Technology) ;
- Deoksun Yoon (Yeungnam University, School of Chemical Engineering & Technology) ;
- Lee, Soonae (Yeungnam University, School of Chemical Engineering & Technology) ;
- Shin, Moo-Whan (Myongji University, Department of Inorganic Materials Engineering)
- Published : 1998.09.01
Abstract
The GaN thick films were deposited on sapphire substrates by the chloride vapor phase epitaxy (CVPE) technique suing the GaCl3-NH3-N2 chemistry. Thermodynamic simulations were carried out to predict the optimum process windows, and the results were compared with the experiments. A large difference in the growth temperature was observed between the calculation an the experiment, and it indicated that the growth of GaN by the CVPE technique is kinetically limited.
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