한국결정성장학회:학술대회논문집 (Proceedings of the Korea Association of Crystal Growth Conference)
- 한국결정성장학회 1998년도 PROCEEDINGS OF THE 15TH KACG TECHNICAL MEETING-PACIFIC RIM 3 SATELLITE SYMPOSIUM SESSION 4, HOTEL HYUNDAI, KYONGJU, SEPTEMBER 20-23, 1998
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- Pages.3-7
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- 1998
Epitaxial Growth of Rare-earth Ion Doped $CaF_2$ layers by MBE
- Ko, J.N. (Institute for Materials Research, Tohoku University) ;
- Chen, Y. (Institute for Materials Research, Tohoku University) ;
- Fukuda, T. (Institute for Materials Research, Tohoku University)
- 발행 : 1998.09.01
초록
The rare-earth ions (R3+, R=Nd, Er) doped CaF2 layers have been grown on CaF2(111) substrate by molecular beam epitaxy. The epitaxial relationship and the crystallinity of CaF2:R3+ layers depending on the concentration of R3+ were studied by reflection high-energy electron diffraction (RHEED). In aspect of application as buffer layer in semiconductor-related hybrid structure, the lattice displacement between CaF2:R3+ layers and CaF2(111) substrate was investigated by X-ray rocking curve analysis.
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