한국결정성장학회:학술대회논문집 (Proceedings of the Korea Association of Crystal Growth Conference)
- 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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- Pages.45-48
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- 1998
Global analysis of heat transfer in Si CZ furnace with specular and diffuse surfaces
- Hahn, S.H. (Institue for Chemical Reaction Science, Tohoku University) ;
- Tsukada, T. (Institue for Chemical Reaction Science, Tohoku University) ;
- Hozawa, M. (Institute for Chemical Reaction Science, Tohoku University) ;
- Maruyama, S. (Institute of Fluid Science, Tohoku University) ;
- Imaishi, N. (Institute of Advanced Material Study, Kyushu University)
- 발행 : 1998.06.01
초록
For the single crystal growth of silicon, a global analysis of heat transfer in a CZ furnace was carried out using the finite element method, where the radiative heat transfer between the surfaces that possess both specular and/or diffuse reflectance components was taken into account, and then the effect of the specular reflection of the crystal and/or melt on the CZ crystal growth was numerically investigated.
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