Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Anneling Characteristics of Chromium Thin Film Strain Gauges

크롬박막 스트레인 게이지의 열처리 특성

  • 강경두 (동서대학교 전자기계공학부) ;
  • 김순철 (경남정보대 전자정보학부) ;
  • 박정도 (경남정보대 전자정보학부) ;
  • 정귀상 (동서대학교 전자기계공학부)
  • Published : 1998.07.20
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Abstract

This paper presents the deposition and anneling characteristics of Cr thin film strain gaugs, which were deposited on glass by DC magnetron sputtring. The optimzed deposition conditions of Cr thin films were the input DC power, 7 W/$cm^2$ and the Ar vacuuming pressure, 9 mTorr, GF, TCR and TCS of Cr thin film strain gauges were 5.86, 400 ppm/$^{\circ}C$ and $\approx$0 ppm/$^{\circ}C$ respectively. The anneling conditions were investigated with the thinkness rang (1200 $\sim$ 3500$\AA$) of Cr thin films, anneling temperature (100 $\sim$ $300^{\circ}C$) and anneling time (24 $\sim$ 72hr). The maximum resistivity and the minimum TCR value were 1757.03 ${\mu}{\Omega}$cm, -194.07 ppm/$^{\circ}C$, respectively.

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