Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Synthesis of diamond thin films from $H_2-CH_4$ gas mixture by rf PACVD

고주파 플라즈마 CVD에 의한 $H_2-CH_4$ 계로부터 다이아몬드 박막의 합성

  • 이상희 (인하대학교 전기공학과) ;
  • 김대일 (인하대학교 전기공학과) ;
  • 박상현 (경남대학교 전기공학과) ;
  • 김보열 (인하공업전문대학 전기과) ;
  • 이종태 (인하공업전문대학 전기과) ;
  • 우호환 (인하공업전문대학 전기과) ;
  • 한상옥 (충남대학교 전기공학과) ;
  • 이덕출 (인하대학교 전기공학과)
  • Published : 1998.07.20
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Abstract

Diamond thin films were deposited on n-type (100) Si wafers from $H_2-CH_4$ gas mixture by rf PACVD. Prior to deposition, mechanical scratching was done to improve density of nucleation sites with diamond paste of 3${\mu}m$. The microstructure of deposited diamond thin films was studied by using the following conditions : discharge power of 500W, $H_2$ flow rate of 50sccm, reaction pressure of 20torr, and $CH_4/H_2$ ratio of 0.3$\sim$1%. The deposited diamond thin films showed that the crystallite was increased at the lower methane concentration. The deposited thin films were characterized by Scanning Electron Microscopy. Raman Spectroscopy and Fourier-Transform Infrared Spectroscopy.

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