Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Reduction of Drain Leakage Current by AlGaAs buffer layer in GaAs MESFET

GaAs MESFET에서 AlGaAs buffer layer에 의한 Drain 누설전류 차단

  • Park, Jun (Dept of Electronics Engineering, Ajou University) ;
  • Jo, Jung-Yol (Dept of Electronics Engineering, Ajou University)
  • 박준 (아주대학교 전자공학부) ;
  • 조중열 (아주대학교 전자공학부)
  • Published : 1998.07.20
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Abstract

We investigated drain leakage current in GaAs power MESFET. The device we studied by 20 simulation has a $1000{\AA}$ thick AlGaAs buffer layer under n-GaAs active layer. The calculation shows that the leakage current through GaAs substrate is significantly reduced by the buffer layer.

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