Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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A Study on the Reaction Mechanism of Selective Epitaxial Growth in $SiH_2Cl_2-H_2-HCl$ System

$SiH_2Cl_2-H_2-HCl$ 시스템에서의 실리콘 선택적 성장에 대한 표면 반응메커니즘 고찰

  • 김봉수 (고려대학교 전기공학과) ;
  • 한승오 (고려대학교 전기공학과) ;
  • 박정호 (고려대학교 전기공학과)
  • Published : 1998.07.20
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Abstract

Three most dominant reactions are adsorption, movement, and desorption of $SiCl_2$ on silicon surface. $SiCl_2$ plays a key role in these dominant reactions. In this paper, surface reactions of $SiH_2Cl_2-H_2-HCl$ system are investigated and few dominant reactions were identified. An equation for Si net growth rate is derived from the analysis of these reactions and it is compared with experimental results of Bolem and Classen.

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