Low temperature characteristics of linear dichroism in columnar structural a-$As_{40}Ge_{10}Se_{15}S_{35}$ thin films

Columnar 구조를 갖는 비정질 $As_{40}Ge_{10}Se_{15}S_{35}$ 박막에서 선형이색성의 저온특성

  • 전진영 (광운대학교 전자재료공학과) ;
  • 김종기 (광운대학교 전자재료공학과) ;
  • 박수호 (광운대학교 전자재료공학과) ;
  • 이현용 (광운대학교 신기술연구소) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 1998.07.20

Abstract

The characteristics of linear dichroism with temperature were investigated in normally($0^{\circ}$) and $80^{\circ}$-obliquely deposited amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ thin films using low temperature equipment. The saturated dichroism($D_{sat}$) of a $80^{\circ}$-obliquely deposited film shows approximately 6% which is the larger value than 4.2 % of normally($0^{\circ}$) deposited film. The $D_{sat}$ of $80^{\circ}$-deposited film was increased to 25 % at 77 K, which is four times larger than that at room temperature. The $D_{sat}$ decreased with increasing temperature and was completely disappeared at about 335K. This could be explained as the tunneling effect due to the thermal excitation of lone-pair electrons in intimate valence alternation pairs(IVAPs) which are considered to be the origin of anisotropy. The decrease of $D_{sat}$ with increasing temperature from 77K to room temperature satisfied Gaussian approximation with a standard deviation of 158K.

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