Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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The Characteristics of $GaAs_{0.35}P_{0.65}$ Epitaxial Layer According to in-situ doping of $NH_3$ gas

In-situ $NH_3$ doping에 따른 $GaAs_{0.35}P_{0.65}$ 에피막의 특성

  • Lee, Eun-Cheol (Department of Electrical Engineering, Kunsan National University) ;
  • Lee, Cheol-Jin (Department of Electrical Engineering, Kunsan National University)
  • Published : 1998.07.20
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Abstract

We have studied the properties of $GaAs_{0.35}P_{0.65}$ epitaxial films on the GaP according to doping of $NH_3$ gas using VPE method by CVD. The efficiency of $GaAs_{0.35}P_{0.65}$ epitaxial films found to be greatly enhanced by the according of nitrogen doping. The diodes were fabricated by means of Zn diffusion into vapor grown $GaAs_{0.35}P_{0.65}$ epitaxial films doped with N and Te. The effects of nitrogen doping on carrier density of epitaxial films, PL wavelength and the power out, forward voltage of diodes are discussed. In the end, The effect of electrical and optical properties is influenced by the deep level and deep level density of nitrogen doping.

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