A study on the Characteristics of Flashover on the Silicon in High Field

고전계 하에서의 실리콘 연면방전특성 연구

The surface breakdown problem has plagued the development of high solid state for more than 30 years, but the physical basis for this flashover phenomenon is still not understood. The only way to overcome those problem and has a workable compact solid state switch is to passivate the surface by a solid state dielectric material, to coating/encapsulation the device in an insulting medium. In this paper, characteristics of flashover in high field Si-dielectric system behavior under high electric field is discussed.